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BF 599 NPN High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert NPN 250 mW SOT-23 (TO-236) 0.01 g Dimensions / Mae in mm 1=B 2=E 3=C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Base current - Basisstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM Tj TS Grenzwerte (TA = 25/C) BF 599 25 V 40 V 4V 250 mW 1) 25 mA 5 mA 150/C - 65...+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 100/C IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 1 mA ICB0 ICB0 VCEsat hFE - - - 38 Kennwerte (Tj = 25/C) Typ. - - 150 mV 70 Max. 100 nA 10 :A - - Collector saturation volt. - Kollektor-Sattigungsspg. 2) DC current gain - Kollektor-Basis-Stromverhaltnis 3) ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 3 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 4 01.11.2003 1 High Frequency Transistors Characteristics (Tj = 25/C) Min. Base-Emitter voltage - Basis-Emitter-Spannung 1) VCE = 10 V, IC = 7 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz Collector-Emitter Capacitance Kollektor-Emitter-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft CCE0 - RthA 0.68 pF fT CCB0 - - 550 MHz 0.35 pF VBEon - 780 mV BF 599 Kennwerte (Tj = 25/C) Typ. Max. - - - Collector-Base Capacitance - Kollektor-Basis-Kapazitat - 420 K/W 2) Marking - Stempelung BF 599 = NB ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 5 |
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